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| MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM10HB-2H * * * * * IC Collector current .......................... 10A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain................................. 5 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3.2 28 3.5 4 C 20.5 28 (42.5) LABEL B 3 1.1 B C 7.3 E 7.3 14.5 1.6 2.2 2.5 E 0.5 5.5 9 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC PC IB Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC TC=25C DC Ratings 1000 1000 1000 7 10 100 2 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M3 Typical value 2500 0.59~0.98 6~10 40 Unit V V V V A W A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=5A, IB=1A IC=5A, VCE=1V Min. -- -- -- -- -- 5 -- VCC=600V, IC=5A, IB1=-IB2=1A -- -- Transistor part Conductive grease applied -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 150 1.0 1.5 -- 1.5 7.0 2.0 1.2 0.4 Unit mA mA mA V V -- s s s C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE PERFORMANCE CURVES VCE (sat), VBE (sat) (V) COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 20 Tj=25C COLLECTOR CURRENT IC (A) 16 IB=2.5A IB=2.0A IB=1.5A IB=1.0A IB=0.5A SATUTATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 2 10 0 7 5 4 3 2 10 -1 7 5 4 3 10 0 Tj=25C Tj=125C IB=1A 8 SATURATION VOLTAGE 12 VBE(sat) VCE(sat) 4 0 0 1 2 3 4 5 VCE (V) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 ton, ts, tf (s) Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=1A 3 2 10 1 7 5 3 2 Tj=25C Tj=125C ts DC CURRENT GAIN hFE SWITCHING TIME 2 3 4 5 7 10 2 VCE=5V VCE=1V 2 3 4 5 7 10 1 tf 10 0 7 5 ton 3 2 10 -1 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 0 2 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Feb.1999 |
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